High-sensitive phototransistor based on vertical HfSe_(2)/MoS_(2) heterostructure with broad-spectral response  

作　　者：Wen Deng Li-Sheng Wang Jia-Ning Liu Tao Xiang Feng-Xiang Chen 邓文;汪礼胜;刘嘉宁;相韬;陈凤翔(Department of Physics Science and Technology,School of Science,Wuhan University of Technology,Wuhan 430070,China)

机构地区：[1]Department of Physics Science and Technology,School of Science,Wuhan University of Technology,Wuhan 430070,China

出　　处：《Chinese Physics B》2022年第12期662-669,共8页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.51702245);the Fundamental Research Funds for the Central Universities(Grant No.WUT2021III065JC)

摘　　要：Van der Waals heterostructures based on the two-dimensional(2D)semiconductor materials have attracted increasing attention due to their attractive properties.In this work,we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe_(2)/MoS_(2)heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse.Under bias,the phototransistor exhibits high responsivity of up to 1.42×103A/W,and ultrahigh specific detectivity of up to 1.39×1015cm·Hz^(1/2)·W^(-1).Moreover,it can also operate under zero bias with remarkable responsivity of 10.2 A/W,relatively high specific detectivity of 1.43×1014cm·Hz^(1/2)·W^(-1),ultralow dark current of 1.22 f A,and high on/off ratio of above 105.These results should be attributed to the fact that the vertical HfSe_(2)/MoS_(2)heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity.Therefore,the heterostructure provides a promising candidate for next generation high performance phototransistors.

关 键 词：HfSe_(2)/MoS_(2)heterostructure PHOTOTRANSISTOR high-sensitive broad-spectral response 

分 类 号：TN15[电子电信—物理电子学]