阻焊后Bussless工艺溅射铜残留的改善研究  

Study on improvement of sputtered copper residue based on bussless after solder resistance process

作　　者：杨海龙 廖浩 任小柯 Yang Hailong;Liao Hao;Ren Xiaoke

机构地区：[1]广州广芯封装基板有限公司,广东广州510700

出　　处：《印制电路信息》2024年第S02期220-226,共7页Printed Circuit Information

摘　　要：文章研究了阻焊后Busssless工艺类型的封装基板产品,在溅射镀膜时表面温度对溅射铜扩散至镀金层形成金铜合金导致溅射铜残留缺陷的影响,通过设计不同厚度基板在对应溅射功率条件下的基板表面温度工艺试验,分析溅射铜残留情况。结果表明,当板厚<0.25 mm时,使用12 kW溅射功率,板面温度范围为188℃~216℃,金面会产生溅射铜残留;使用10 kW溅射功率,板面温度范围为154~166℃,金面无溅射铜残留;当板厚≥0.25 mm时,无论是使用12kW还是10 kW溅射功率,金面均无溅射铜残留。In this paper,the effect of surface temperature on the residual defects of sputtered copper caused by the diffusion of sputtered copper to gold-plated layer and formation of copper-gold alloy was studied for the package substrate products based on Bussless after solder resistance process type,the surface temperature of the substrate with different thickness under corresponding sputtering power was designed for the process experiment to analyze the sputtering copper residue.The result show that when the plate thickness is 0.25 mm,the temperature range of the plate surface using 12 kW sputtering power is 188-216℃and the sputtering copper residue will be generated on the gold surface,the temperature range of the plate surface using 10 kW sputtering power is 154-166℃and the sputtering copper residue will not be generated on the gold surface,when the plate thickness is≥0.25 mm,whether 12kW or 10kW power is used and there is no sputtering copper residue.

关 键 词：溅射镀膜 阻焊后Bussless 溅射铜残留 

分 类 号：TN41[电子电信—微电子学与固体电子学]