基于AlN衬底的AlGaN/GaN HFET材料性能研究  

Study on Properties of AlGaN/GaN HFET Based on AlN Substrate

作　　者：李佳 房玉龙 崔波 张志荣 尹甲运 高楠 陈宏泰 LI Jia;FANG Yu-long;CUI Bo;ZHANG Zhi-rong;YIN Jia-yun;GAO Nan;CHEN Hong-tai(Hebei Semiconductor Research Institute)

机构地区：[1]河北半导体所

出　　处：《标准科学》2022年第S01期269-272,共4页Standard Science

摘　　要：AlN与其他常见衬底材料(如蓝宝石或碳化硅)相比,具有与GaN晶格失配低、衬底与外延层间的应力小等特点,在制备高温、高频、高功率电子器件方面都有着非常广泛的应用前景。本文采用金属有机物化学气相沉积(MOCVD)技术在AlN衬底上的外延生长了AlGaN/GaN HFET材料。通过高分辨率X射线双晶衍射仪、非接触霍尔、拉曼光谱对外延材料进行了对比分析。结果表明,GaN材料的(002)和(102)晶面摇摆曲线半高宽分别为69弧秒和534弧秒,AlGaN/GaN HFET外延材料二维电子气迁移率达到1,572cm2~/V·s,AlN衬底上外延的GaN应力为0.089GPa,在AlN衬底上实现了高质量的AlGaN/GaN HFET外延材料生长。Compared with other materials(sapphire and SiC),AlN and GaN have the characteristics of low lattice adaptation and low stress between substrate and epitaxial layer,which has a wide application prospect in the preparation of high temperature,high frequency and high power electronic devices.In this paper,AlGaN/GaN HFET materials are grown on AlN substrates by metal organic chemical vapor deposition(MOCVD).The epitaxial materials are analyzed by highresolution X-ray double crystal diffractometer,non-contact Hall and Raman spectroscopy.The results show that the FWHM of(002)and(102)crystal plane rocking curves of GaN are 69 arc seconds and 534 arc seconds,respectively.The twodimensional electron gas(2DEG)mobility of AlGaN/GaN HFET epitaxial material is 1572cm~2/v.s,and the epitaxial GaN stress on AlN substrate is 0.089 GPa.High quality AlGaN/GaN HFET epitaxial material is grown on AlN substrate.

关 键 词：AlN衬底 AlGaN/GaN HFET 迁移率 应力 

分 类 号：TN386[电子电信—物理电子学] TB30[一般工业技术—材料科学与工程]