先进CMOS制造工艺的技术演进及自主发展思考  

Evolution of Advanced CMOS Technology and Suggestions for Its Development in China

作　　者：张卫[1,2] 徐敏 陈鲲 刘桃 杨静雯 孙新 黄自强 汪大伟 吴春蕾 王晨 徐赛生 ZHANG Wei;XU Min;CHEN Kun;LIU Tao;YANG Jingwen;SUN Xin;HUANG Ziqiang;WANG Dawei;WU Chunlei;WANG Chen;XU Saisheng(School of Microelectronics,Fudan University,Shanghai 200433,China;Shanghai Integrated Circuit Manufacturing Innovation Center Co.Ltd.,Shanghai 200120,China)

机构地区：[1]复旦大学微电子学院,上海200433 [2]上海集成电路制造创新中心有限公司,上海200120

出　　处：《前瞻科技》2022年第3期52-60,共9页Science and Technology Foresight

摘　　要：信息社会的迅猛发展极大推动了对高性能计算的需求。而先进互补金属氧化物半导体(CMOS)制造工艺是制造高性能计算芯片的保障,因此成为世界顶尖设计公司和芯片制造企业竞争的技术高地。文章概述了鳍式场效应晶体管(FinFET)之后技术演进到环栅场效应晶体管(GAAFET)的必然性,以及在工艺模块、系统集成和工艺无损表征上带来的挑战。在先进CMOS制造工艺技术的创新上,需要有从器件开发到系统设计的思维转变;设计工艺协同优化(DTCO)将会发挥越来越重要的作用。面向未来国产先进的CMOS制造工艺的发展,在技术开发和人才培养方面提出了发展建议和举措。The rapid development of information society has greatly promoted the demand for high-performance computing(HPC),and advanced complementary metal oxide semi-conductor(CMOS)technology ensures the manufacturing of HPC chips.As a result,the technology has been pursued vigorously by top chip design companies and chip manufacturing enterprises in the world.This paper reviews the necessity of a Fin field-effect transistor(FinFET)evolving into a gate-all-around field-effect transistor(GAAFET)and analyzes challenges in technological modules,system integration,and non-destructive technological characterization.It is pointed out that the innovation of advanced CMOS technology requires a transition from device development to system design,and design technology co-optimization(DTCO)will become increasingly important.In addition,the paper puts forward suggestions and measures for the development of advanced CMOS technology in China in terms of technology development and talent cultivation.

关 键 词：纳米片 环栅 寄生沟道 寄生电阻/电容 沟道应力 设计工艺协同优化 无损表征 

分 类 号：TN386[电子电信—物理电子学]