基于SICL和SIW的模式复合双工器  被引量:1

Mode Composite Duplexer Based on SICL and SIW

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作  者:廖芊芊 陈春红 黑嘉炜 王苏秦 吴文 LIAO Qian-qian;CHEN Chun-hong;HEI Jia-wei;WANG Su-qin;WU Wen(Key Laboratory of Near-Range RF Sensing ICs&Microsystems(NJUST),Ministry of Education,School of Electronic and Optical Engineering,Nanjing University of Science and Technology,Nanjing 210094,China)

机构地区:[1]近程射频感知芯片与微系统教育部重点实验室,电子工程与光电技术学院,南京理工大学,南京210094

出  处:《微波学报》2023年第S01期160-162,共3页Journal of Microwaves

摘  要:本文提出了一种采用基片集成同轴线(SICL)和基片集成波导(SIW)的双频段、高隔离的模式复合双工器。该双工器采用双层PCB结构,结合SICL和SIW的优点,根据不同频率支持TEM模或TE10模传输,以实现双端口在低频和高频的高隔离度性能。通过仿真验证,双工器在低频段(≤25GHz)以及高频段(30-43GHz)的插入损耗均小于1dB,在各工作频段两端口之间的隔离度均达到37dB以上,为微波毫米波频率下工作的天线和器件提供应用价值。A dual-band,high isolation mode composite duplexer based on substrate integrated coaxial line(SICL)and substrate integrated waveguide(SIW)is proposed in this paper.The duplexer adopts a double-layer PCB structure,combining the advantages of SICL and SIW,and supports TEM mode or TE10 mode transmission according to different bands to achieve high isolation performance of the dual ports at low and high bands.According to simulated results,the insertion loss of the duplexer in the low band(≤25GHz)and high band(30-43GHz)is less than 1dB,and the isolation degree between the two ports in each operating frequency range is above 37dB,providing application value for antennas and devices operating at microwave and millimeter wave frequencies.

关 键 词:基片集成同轴线 基片集成波导 双工器 高隔离 

分 类 号:TN631.2[电子电信—电路与系统]

 

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