SONOS存储单元数据保持特性退化研究  

Study on Retention Degradation of SONOS Memory Cells

作　　者：闫宇泽 刘岐 周泉 李清 俞军[1,2] YAN Yuze;LIU Qi;ZHOU Quan;LI Qing;YU Jun(Shanghai Fudan Microelectronics Group Company Limited,Shanghai 200433,P.R.China;School of Microelectronics,Fudan University,Shanghai 201203,P.R.China)

机构地区：[1]上海复旦微电子集团股份有限公司,上海200433 [2]复旦大学微电子学院,上海201203

出　　处：《微电子学》2023年第6期1104-1108,共5页Microelectronics

摘　　要：探讨了基于Fowler-Nordheim(F-N)隧穿进行编程、擦除的硅-氧化物-氮化物-氧化物-硅(SONOS)存储单元在擦写循环后的数据保持特性。分别通过分析和实验研究了擦写过程中操作电压大小对于VTH(编程)态、VTL(擦除)态存储单元数据保持性能退化的影响。对于VTH态单元,其数据保持性能退化程度受操作电压大小的影响不明显,电荷流失速度主要受温度影响;而VTL态单元数据保持性能退化程度受操作电压大小的影响较大,电荷流失速度与温度的关系不明显。通过对比不同操作条件下进行擦写循环后的数据保持性能退化程度,总结了有利于减小SONOS存储器数据保持性能退化的操作条件。The retention degradation of a silicon-oxide-nitride-oxide-silicon(SONOS)non-volatile memory after Fowler-Nordheim(F-N)tunneling erase/program cycle was studied.The influences of operating voltage levels on the retention degradation of VTH(programmed)and VTL(erased)cells were respectively analyzed and experimentally examined.For programmed cells,charge loss rate was mainly determined by temperature and retention degradation showed no obvious dependence on operating voltage levels.On the other hand,retention degradation of erased cells was largely influenced by operating voltage levels,and charge loss rate had no obvious dependence on temperature.Comparison of retention degradation under different combinations of operating conditions was carried out,and preferred operating strategy was proposed.

关 键 词：SONOS 数据保持 退化 

分 类 号：TN406[电子电信—微电子学与固体电子学]