功率集成电路TID加固环栅器件研究现状综述  

An Overview of the Research on TID Radiation-Hardened Enclosed Layout Devices for Power Integrated Circuits

作　　者：罗萍[1,2] 吴昱操 范佳航 张致远 冯皆凯 赵忠 LUO Ping;WU Yucao;FAN Jiahang;ZHANG Zhiyuan;FENG Jiekai;ZHAO Zhong(State Key Lab.of Elec.Thin Films and Integr.Dev.,Univ.of Elec.Sci.and Technol.of China,Chengdu 610054,P.R.China;Chongqing Institute of Microelec.Industry Technol.,Univ.of Elec.Sci.and Technol.of China,Chongqing 400060P.R.China)

机构地区：[1]电子科技大学电子薄膜与集成器件全国重点实验室,成都611731 [2]电子科技大学重庆微电子产业技术研究院,重庆400060

出　　处：《微电子学》2023年第6期957-964,共8页Microelectronics

基　　金：重庆市自然科学基金资助项目(CSTB2023NSCQMSX0153)

摘　　要：总结了标准工艺下功率集成电路中总剂量辐射(TID)加固环栅MOS器件与环栅功率器件的研究现状,归纳了不同结构形态的环栅器件的性能优劣,推荐8字形环栅MOS器件、华夫饼功率器件及回字形LDMOS器件结构用于功率集成电路的TID加固设计。同时,阐述了现有环栅MOS器件等效W/L的建模情况,提出保角变换是环栅MOS器件等效W/L精确建模的重要方法,最后还给出了环栅器件建库的基本流程。The researches on total ionizing dose radiation-hardened enclosed layout MOS and enclosed layout power device in power integrated circuits under standard processes were summarized.The advantage and disadvantage performances of different structural forms of radiation-hardened enclosed layout devices was analyzed.8-shaped enclosed layout MOS,waffle typed layout power MOS and rectangular-shape LDMOS were recommended in power integrated circuit design.The modeling of equivalent W/L of existing radiation-hardened enclosed layout MOS devices were elaborated.Conformal transformation was an important way for accurate modeling of equivalent W/L of enclosed layout MOS devices.Finally,the basic process for building a library of enclosed layout devices was provided.

关 键 词：总剂量辐射加固 环栅MOS器件 环栅功率MOS 等效W/L建模 环栅器件建库 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN406