NJFET器件饱和电流影响因子及工艺优化研究  

Research on Saturated Current Influencing Factor and Technology Optimization of NJFET

作　　者：陈培仓 朱赛宁 潘建华 陈慧蓉 CHEN Peicang;ZHU Saining;PAN Jianhua;CHEN Huirong(Wuxi Zhongwei Microchips Co.,Ltd.,Wuxi,Jiangsu 214035,P.R.China)

机构地区：[1]无锡中微晶园电子有限公司,江苏无锡214035

出　　处：《微电子学》2022年第6期1061-1064,共4页Microelectronics

摘　　要：针对N沟道结型场效应晶体管(NJFET)在工艺制造过程中极易出现饱和电流一致性差的问题,从一次氧化、栅注入和栅推结等方面对饱和电流工艺影响因子开展了实验研究,并提出了工艺优化和控制方法,使器件饱和电流参数得到有效控制,一致性由6.90%改善至0.38%,圆片对档率由85%提升到96%以上,提升了器件产品质量,降低了成本。Due to NJFET’s poor consistency of saturated current in fabrication,experimental studies were conducted on saturation current process influencing factors from first oxidation,gate implantation and gate annealing process,and process optimization and control methods were proposed,resulting in effective control of device saturation current parameters.The stability is improved from 6.9%to 0.38%and the yield is increased from 85%up to 96%,which significantly improve the product quality and reduced the cost.

关 键 词：JFET 饱和电流 氧化 注入 退火 

分 类 号：TN432[电子电信—微电子学与固体电子学]