忆阻器堆叠交叉阵列漏电流问题研究进展  

Research Progress on the Sneak Current Issue in Stacked Crossbar Array of Memristors

作　　者：谭翊鑫 何慧凯 TAN Yixin;HE Huikai(China NanHu Academy of Electronics and Information Technology,Jiaxing,Zhejiang314001,P.R.China;Institute of Advanced Technology,University of Science and Technology of China,Hefei 230000,P.R.China)

机构地区：[1]中国电子科技南湖研究院,浙江嘉兴314001 [2]中国科学技术大学先进技术研究院,合肥230000

出　　处：《微电子学》2022年第6期1016-1026,共11页Microelectronics

基　　金：浙江省“领雁”研发攻关计划资助项目(2022C01098)

摘　　要：忆阻器是一种新型的非易失性存储器,具有结构简单、功耗低、集成密度高、类突触性质等特点。忆阻器主要以交叉阵列的形式作为人工突触,被用于构造人工神经网络,然而,忆阻器的交叉阵列面临着潜在的通路漏电流问题,这阻碍了忆阻器的进一步应用。文章简要分析了忆阻器堆叠交叉阵列产生漏电流的原因,主要介绍了二极管-忆阻器、选通器-忆阻器、晶体管-忆阻器等多种抑制漏电流的方案,总结并展望了超大规模集成忆阻器的应用前景。Memristor is an emerging non-volatile memory,which has several remarkable features such as simple structure,low power consumption,high integration density,and synaptic-like behaviour.Memristors have been primarily proposed to function as artificial synapses for constructing artificial neural network in the form of crossbar array.However,the crossbar array of memristors is confronted with severe potential path sneak currents issue,resulting in a large obstacle to further applications of memristors.In this paper,the causes of sneak currents issue in stacked crossbar array of memristor were analyzed briefly.The solutions,such as One Diode-One Resistor(1D1R),One Selector-One Resistor(1S1R),and One Transistor-One Resistor(1T1R),to suppress sneak currents were demonstrated.The promissing future of memristor with very large scale integrated crossbar array for various application was anticipated.

关 键 词：忆阻器 漏电流 1T1R 1S1R 1D1R 

分 类 号：TN60[电子电信—电路与系统]