Research on Ultra-precision Machining Technology of Single Crystal Silicon Wafers  

作　　者：XUQin PANJinping 

机构地区：[1]Zhejiang Haina Semiconductor Co., Ltd., Quzhou Zhejiang 324300, China

出　　处：《外文科技期刊数据库(文摘版)工程技术》2022年第7期153-156,共4页

摘　　要：Integrated circuit IC is the cornerstone of todays information industry and information technology. CI technology is a key technology to promote Chinas economic and social development, and is the key to the transformation and upgrading of Chinas traditional industries. The main raw materials of CI are silicon, germanium, arsenide and so on. More than 90% of integrated circuits use silicon chips. High-quality silicon wafers are the foundation of chip manufacturing and CI development;Silicon wafers made from CI not only require high flatness, small surface roughness, but also no displacement layers and scratches. Grinding and polishing process and silicon wafer equipment occupy an important position in the CI manufacturing process and are the key technology of CI manufacturing. This paper mainly studies the grinding and polishing process of single crystal silicon wafer. Silicon crystals are hard, brittle and difficult to process, and are prone to processing defects such as scratches and stress during grinding and polishing. The grinding and polishing quality and efficiency of the silicon wafers are key factors in this process. In this paper, several aspects that mainly affect the quality and efficiency of silicon wafer grinding and polishing are studied from two aspects of the final mechanochemical grinding and polishing process factors.

关 键 词：single crystal silicon wafer ultra-precision machining Analysis of the Preparation Process of Silic 

分 类 号：TN405[电子电信—微电子学与固体电子学] TN305.2