Research on Improvement of Static Power Consumption of 90nm Embedded Flash Memory Chip  

作　　者：LINGZhouxuan SUNQi JIAXuemei LIANGXiao 

机构地区：[1]ShanghaiHuahongHongliSemiconductorManufacturingCo.,Ltd.,Shanghai201203,China

出　　处：《外文科技期刊数据库(文摘版)工程技术》2022年第12期065-070,共6页

摘　　要：Based on the electrical monitoring parameter analysis, physical failure (hot spot) analysis and yield graphics and process characteristics, suspect the subthreshold leakage of kernel device (Core Device) and static register (SRAM) circuit leakage affects the total static power consumption, the corresponding failure model, and through the channel doping ion injection condition optimization, gate polysilicon deposition thickness adjustment and the improvement of N inverted well (NW), finally solve the 90nm embedded flash memory chip.

关 键 词：static power consumption subthreshold leakage optical resistance morphology static register gate polysilicon deposition physical failure analysis 

分 类 号：TN431.2[电子电信—微电子学与固体电子学]