ICP-AES法测定铜合金中微量硅  

Determination of Trace Silicon in Copper-alloy by ICP-AES

作　　者：张泉[1] 李岩松[1] 

机构地区：[1]沈阳地质矿产研究所,辽宁沈阳100032

出　　处：《有色矿冶》2005年第2期50-51,36,共3页Non-Ferrous Mining and Metallurgy

摘　　要：研究了ICP-AES法测定铜合金中微量硅的最优化条件。采取标准加入法消除基体干扰。此方法操作简便,重现性好,回收率为98.7%～102.3%,RSD≤0.0221,测定范围为0.001%～0.5%。The conditions for determination of Si in Cooper-alloy by ICP-AES were studied. Interference of base solution can be despeled by standard add. Under the optimum condition, the recoceries of the method is 98.7%～102.3%, 0.001%～0.5% Si can be measured. The method has high good accuracy. (Si in Copper-alloy was measured for 10 times, RSD≤0.022 1). The results are satisfactory.

关 键 词：标准加入法 ICP-AES法 铜合金 硅 

分 类 号：TG115.339[金属学及工艺—物理冶金]