Cd_2Ge_7O_(16)中Tb的长余辉发光特性  

Long Afterglow Property of Cd_2Ge_7O_(16):Tb^(3+)

作　　者：易守军[1] 刘应亮[1] 张静娴[1] 袁定胜[1] 容建华[1] 黄浪欢[1] 

机构地区：[1]暨南大学化学系,广州510632

出　　处：《无机化学学报》2004年第3期247-250,235,共5页Chinese Journal of Inorganic Chemistry

基　　金：国家自然科学基金资助项目(No.59982003;20171018);广东省自然科学基金资助项目(No.990484;013201)。

摘　　要：本文研究了Cd2Ge7O16∶Tb3+材料的发光及其长余辉性质。指出Tb3+的发光是该离子的5D3鄄7FJ、5D4鄄7FJ两种跃迁产生的;随着掺杂浓度的增加5D4鄄7FJ跃迁增强,发光颜色由蓝变绿。并把该材料的长余辉性质归结为基质结构中有电子陷阱和空穴陷阱。提出余辉机理模型。Luminescence and long afterglow property of Cd2Ge7O16:Tb3+ are investigated in the paper. It is shown that luminescence of Cd2Ge7O16:Tb3+ is due to the 5D3-7FJ, 5D4-7FJ transitions of Tb3+ ions. With the increasing of Tb3+ concentration, the intensity of the 5D3-7FJ emission is decreased, while the intensity of the 5D4-7FJ emission is increased. The color of Cd2Ge7O16:Tb3+ is becoming green increasely. Long afterglow property of Cd2Ge7O16:Tb3+ is due to the electron trap and hole trap of Cd2Ge7O16:Tb3+. We ...

关 键 词：Cd2Ge7O16∶Tb3+ 长余辉 发光机理 

分 类 号：O614[理学—无机化学]