HCMOS器件γ辐射损伤电路分析  

Circuit Analyse of HCMOS Devices Damaged due to γ Radiation

作　　者：楼滨乔[1] 

机构地区：[1]北京大学技术物理系,100871

出　　处：《核电子学与探测技术》1993年第4期243-246,共4页Nuclear Electronics & Detection Technology

摘　　要：本文对最基本的HCMOS器件(反相器和与非门)作了γ辐射损伤实验。通过器件性能变化,分析了γ辐射对电路的作用。This paper has studied experimentally the y radiation damage to the most fundamental HCMOS devices (inverters and N-AND gates). The degradation of the performance of HC-MOS circuit due to Y radiation has bean analysed in the paper.

关 键 词：辐射损伤 阈电压移动 HCMOS器件 

分 类 号：TL8[核科学技术—核技术及应用]