硅双结型色敏器件蓝紫响应度的研究与改善  

Research and Development on Purple-blue Sensitivity of Si Color Sensor with Double P-N Junction

作　　者：张媛媛[1] 丁双朋[1] 陈炳若[1] 

机构地区：[1]武汉大学物理科学与技术学院,湖北武汉430072

出　　处：《半导体光电》2003年第4期238-241,共4页Semiconductor Optoelectronics

基　　金：湖北省科技厅攻关课题(2002AA101B06).

摘　　要：　尝试选择不同的衬底材料、不同的工艺条件,以及合理的结构,来改善硅双结色敏器件的蓝紫光响应,并在此基础上制作了蓝紫响应较好的器件。通过测试与分析,得出采用单晶衬底材料、深结较浅工艺的N+PN型器件蓝紫响应度较好的结论。Development on purpleblue sensitivity of Si color sensor with double PN junction is tested through different choices of substrate materials, technic conditions and structures, on the base of which a device with fine sensitivity has been fabricated. Measurement and analysis results show that the N+PNtype device using highresistance silicon substrate and low CB junction exhibits better purpleblue sensitivity.

关 键 词：双结型硅色敏器件 蓝紫响应度 短路电流比波长特性 

分 类 号：TN314[电子电信—物理电子学]