基于半导体工艺制备碳纳米管阴极图形阵列  

Study on Carbon Nanotubes Pattern Cathode Prepared by Semiconductor Technology

作　　者：朱长纯[1] 史永胜[1] 李琰[1] 

机构地区：[1]西安交通大学电子与信息工程学院,陕西西安710049

出　　处：《半导体光电》2003年第6期441-443,共3页Semiconductor Optoelectronics

基　　金：国家"863"计划项目(2001AA3130090);国家自然科学基金重点项目 (60 0 3 60 1 0 )

摘　　要：　提出一种成本低、简单易行的碳纳米管图形阵列制备技术。首先在硅基底上采用热解工艺生长碳纳米管(CNT)阴极,再用光刻腐蚀法制备阴极图形阵列。研究了掩模精度及腐蚀液的浓度对图形阵列的影响,对所得到的图形样品进行XPS分析表明,图形腐蚀彻底、图形边沿轮廓清晰;以二极管结构FED测试场发射性能知:该阴极开启场1.5V/μm;在电场强度为2.0V/μm下,电流密度为58mA/mm2,发光亮度高达450cd/m2。Fabrication of cathode arrays of carbon nanotubes is proposed in this paper. Carbon nanotubes on silicon substrate were synthesized by catalytic pyrolysis procedures. Cathode pattern arrays were etched by hydrofluoric acid solution. The sample was characterized with XPS and SEM. The results indicate that the precision of the photolithographic mask and the concentration of acid solution have a considerable effect on the pattern features. The field emission performance shows that the cathode onset field is...

关 键 词：碳纳米管 图形阵列 场致发射显示器 

分 类 号：TN304.13[电子电信—物理电子学]