Surface Micromachining of Bulk Acoustic Wave Filters  

作　　者：赵宏锦 任天令 丛鹏 刘建设 刘理天 李志坚 

机构地区：[1]Institute of Microelectronics,Tsinghua University,Beijing 100084,China

出　　处：《Tsinghua Science and Technology》2003年第2期126-129,共4页清华大学学报（自然科学版（英文版）

基　　金：Supported by the National High-Technology Development Program of China(No.G1999033105);the National Natural Science Foundation of China (No.69806007)

摘　　要：The most common typical bulk acoustic wave (BAW) filters are fabricated using bulk micromachining technology, but they have several disadvantages. This paper describes a structure for front end passband BAW filters manufactured using surface micromachining. Porous silicon is used as a thick sacrificial layer. The structure reduces the influence of the support film on the filter to improve the VLSI compatibility as well as the filter quality. The cross-talk between resonators with different frequencies can be dramatically reduced by using resonators with a self-supporting structure.The most common typical bulk acoustic wave (BAW) filters are fabricated using bulk micromachining technology, but they have several disadvantages. This paper describes a structure for front end passband BAW filters manufactured using surface micromachining. Porous silicon is used as a thick sacrificial layer. The structure reduces the influence of the support film on the filter to improve the VLSI compatibility as well as the filter quality. The cross-talk between resonators with different frequencies can be dramatically reduced by using resonators with a self-supporting structure.

关 键 词：Acoustic waves ETCHING Porous silicon Resonators Wave filters 

分 类 号：TN713[电子电信—电路与系统]