GaAs远红外探测器中的辐射复合特性研究  

RADIATIVE RECOMBINATION IN GaAs FAR-INFRARED DETECTOR STRUCTURES

作　　者：沈文忠[1] 蒋立峰[1] 俞罡[1] 王晓光[2] 沈学础[2] 

机构地区：[1]上海交通大学物理系凝聚态光谱与光电子物理实验室 [2]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083

出　　处：《红外与毫米波学报》2002年第z1期15-18,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(批准号10125416和60006005)部分资助项目;上海市科技启明星计划(批准号00QA14012)和教育部TRAPOYT资助项目

摘　　要：借助光致发光技术对ｎ－ＧａＡｓ同质结内发射远红外探测器结构进行了详细的辐射复合特性研究．根据发光特性和高密度理论计算,观察和确认了来自探测器发射层中的光致发光信号．提出了光生载流子转移模型,很好地解释了发射层中光致发光信号与温度和激发功率的依赖关系．根据得到的辐射复合特性,提出了进一步提高探测器工作温度的方案．A detailed investigation was carried out of radiative recombination in n-GaAs homojunction far-infrared detector structures by temperature-dependent steady-state photoluminescence measurements. The observation of the emitter layer luminescence structures was identified from their luminescence characteristics, in combination with high density theoretical calculation. A photo-generated carrier transferring model was proposed, which can well explain the dependencies of the luminescence intensities on the laser excitation intensity and temperature. Furthermore, a proposal to improve the detector operating temperature was presented according to the obtained radiative recombination behavior.

关 键 词：辐射复合 远红外探测器结构 光生载流子转移. 

分 类 号：TN2[电子电信—物理电子学]