同一外延层结构高速DFB激光器/EA调制器集成光源的研究  

STUDY ON HIGH-SPEED DFB LASER/INTEGRATED EAMODULATORS BASED ON AN IDENTICALEPITAXIAL LAYER STRUCTURE

作　　者：熊兵[1] 王健[1] 孙长征[1] 罗毅[1] 

机构地区：[1]清华大学电子工程系集成光电子学国家重点实验室,北京100084

出　　处：《红外与毫米波学报》2002年第z1期19-22,共4页Journal of Infrared and Millimeter Waves

基　　金：国家自然科学基金(批准号96525407及69896260-1);"973"国家重点基础研究项目(批准号G2000-03-6601)资助项目

摘　　要：对利用同一外延层结构实现ＤＦＢ激光器与ＥＡ调制器的集成机理进行了理论分析,指出该集成方法有可能获得激光器激射波长与调制器工作波长之间的良好匹配．在理论分析的基础上,研制出了基于同一外延层结构的高速集成光源,该器件具有良好的静态特性,并达到了约８ＧＨｚ的小信号调制带宽．A theoretical analysis of the mechanism of wavelength compatibility in an electroabsorption (EA) modulator integrated distributed feedback (DFB) lasers was made based on identical-epitaxial-layer (IEL) integration scheme. It was shown that, as a result of carrier-induced bandgap shrinkage and temperature rise in the active region, the gain profile of quantum well material will shift towards the longer wavelength side of the excitonic absorption peak, making it possible to achieve wavelength compatibility in an IEL structure. Based on these results, IEL integrated sources were designed and fabricated. These devices have shown excellent static characteristics as well as desirable high-speed modulation performances, with a small signal modulation bandwidth of about 8 GHz.

关 键 词：同一外延层 DFB激光器 EA调制器 高速集成光源. 

分 类 号：TN24[电子电信—物理电子学]