高掺杂浓度Nd∶YAG微片激光器获得高效激光输出  

HEAVILY DOPED Nd'YAG MICROCHIP LASER WITH HIGH EFFICIENCY OUTPUT

作　　者：董 俊[1] 邓佩珍[1] 

机构地区：[1]中国科学院上海光学精密机械研究所,上海201800

出　　处：《红外与毫米波学报》2002年第z1期31-34,共4页Journal of Infrared and Millimeter Waves

基　　金：国家863计划;国家自然科学基金(批准号6998806)资助项目

摘　　要：用温度梯度法成功地生长了高掺Ｎｄ:ＹＡＧ晶体(Ｎｄ掺杂浓度高达３ａｔ．%)采用脉冲和连续的钛宝石激光器作为抽运源,对掺杂浓度分别为２ａｔ．%和３ａｔ．%的Ｎｄ:ＹＡＧ晶体微片进行了激光实验,获得了高效的激光输出．Heavily doped Nd: YAG crystals (with Nd concentration as high as 3at. % ) were grown successfully by temperature gradient technology (TGT) in SIOM. Using Ti:sapphire laser in pulse and in cw as pumping source, the laser experiments of 2at. % and 3at. % Nd doped Nd : YAG microchips were performed and high efficiency output was obtained.

关 键 词：高掺浓度Nd∶YAG晶体 温度梯度法 微片激光器. 

分 类 号：TN24[电子电信—物理电子学]