退火与未退火MM-HEMT材料中二维电子气的磁输运特性研究  

MAGNETOTRANSPORT STUDY OF TWO-DIMENSIONALELECTRON GAS IN ANNEALED AND UNANNEALEDMM-HEMT MATERIAL

作　　者：蒋春萍[1] 郭少令[1] 孙 全[1] 黄志明[1] 桂永胜[1] 郑国珍[1] 褚君浩[1] 崔利杰[2] 曾一平[2] 朱战平[2] 王保强[2] 

机构地区：[1]中国科学院上海技术物理研究所红外物理国家重点实验室,上海200083 [2]中国科学院半导体研究所材料科学中心,北京100083

出　　处：《红外与毫米波学报》2002年第z1期79-82,共4页Journal of Infrared and Millimeter Waves

摘　　要：采用变磁场霍耳测量,在1.5～90K的温度范围内,研究了经过快速热退火与未退火掺杂MM-HEMT材料中二维电子气的输运特性.通过对Shubnikov-de Hass(SdH)振荡曲线进行快速Fourier变换分析,获得了该样品沟道中子能带上的电子浓度等信息,并采用迁移率谱(MS)和多载流子拟合过程法(MFC)相结合的方法分析了该样品中子能带电子的浓度和迁移率.该方法与SdH测量所获得的结果符合得很好,都证实了在很高的温度下退火将影响样品沟道中电子的浓度和迁移率,对材料性能起着不可低估的作用.Variable magnetic-field Hall measurements were used to investigate the transport properties of the two-dimensional electron gas (2DEG) in annealed and unannealed MM-HEMT' s on GaAs substrates at the temperature of 1. 5 to 90 K. The densities and mobilities of the carriers in channel of unannealed and annealed samples were simultaneously determined using the fast Fourier transform (FFT) analysis and a hybrid approach consisting of mobility spectrum (MS) analysis followed by a multi-carrier fitting (MCF) procedure. Good agreement in the determination of electron density was found between the hybrid approach and SdH measurements. In addition, it was found that high annealing temperature has an influence on the densities and mobilities of carriers in channel. The results obtained in this study are very important for further improvement of device performance.

关 键 词：变磁场霍耳测量 MM-HEMT材料 二维电子气 快速热退火. 

分 类 号：TN2[电子电信—物理电子学]