掺氮类金刚石薄膜的导电性能及退火特性  

ELECTRICAL CONDUCTION PROPERTIES AND ANNEALING EFFECT OF NITRIDE DLC FILMS

作　　者：张伟丽[1] 居建华[1] 夏义本[1] 范轶明 王林军[1] 黄志明[2] 郑国珍[2] 汤定元[2] 

机构地区：[1]上海大学材料科学与工程学院,上海201800 [2]中国科学院上海技术物理研究所,上海200083

出　　处：《红外与毫米波学报》2002年第z1期97-100,共4页Journal of Infrared and Millimeter Waves

摘　　要：对含氮的类金刚石薄膜的导电性能进行了研究,发现随着氮含量的增加,沉积薄膜的电导率增加较缓,且当氮含量达到一定值后,氮含量继续增加反而薄膜电导率有所下降．对薄膜进一步热处理,结果表明低掺氮的薄膜退火后导电性能有了较大的提高,而高掺氮的薄膜退火后电导率有所下降．文章通过分析退火前后薄膜的红外光谱,提出了充当施主杂质中心氮原子“激活”的概念和高掺杂后薄膜中氮原子形成ａ－ＣＮｘ结构从而从微观结构解释了掺氮对类金刚石薄膜导电性电能的影响．Electrical conduction properties of DLC: N films were studied. From the experiment result, it can be found that the electrical conductivity of the deposited films increases slowly with increasing the N content, however, the electrical conductivity of the film will decrease after the N content in the film reaches a certain value of 12. 6at% . Thermal treatment results show that the electric conductivity of the lower N doped DLC film increases rapidly, while that of the heavily N doped film further decreases after the annealing treatment under 30℃ for 30min. FTIR spectra analysis results show that the nitrogen atom as an impurity center has an 'activation process during the thermal treatment, and the nitrogen in the heavily doped film forms an a-CNx new phase. Therefore, the nitrogen in these two kinds of films has different effects on the electric conductivity.

关 键 词：掺氮类金刚石薄膜 导电性能 微观结构. 

分 类 号：TN3[电子电信—物理电子学]