导模法和温度梯度法生长r面蓝宝石(英文)  

GROWTH OF r-PLANE SAPPHIRE BY EDGE-DEFINED FILM-FED GROWTH AND TEMPERATURE GRADIENT TECHNIQUE

作　　者：杨新波[1] 李红军[1] 徐军[1] 程艳[1] 周国清[1] 

机构地区：[1]中国科学院上海光学精密机械研究所 中国科学院上海光学精密机械研究所 上海 中国科学院研究生院

出　　处：《硅酸盐学报》2008年第5期678-682,共5页Journal of The Chinese Ceramic Society

基　　金：国家“863”计划(2006AA03A104);国家自然科学基金(60607015)资助项目

摘　　要：r面(0112)蓝宝石晶体可用作制备非极性GaN薄膜的衬底。采用温度梯度法(temperature gradient technique,TGT)和导模法(edge-defined film-fed crystal growth,EFG)生长了质量良好的r面蓝宝石晶体。利用双晶衍射、光学显微镜、光谱仪观察和分析了晶体的结构和缺陷。结果表明:TGT法生长的r蓝宝石晶体的双晶摇摆曲线对称性好,半高宽值仅为18 rad.s,位错密度为4×103 cm-2,透过率达83%,晶体质量好。与TGT法相比,EFG法生长的r面蓝宝石晶体的结构完整性较差,位错密度为5×105 cm-2,透过率仅为75%。但是EFG法具有晶体生长速度快,后期加工成本低的优点。(0112) r-plane sapphire is usually used as a substrate for growing nonpolar(1120) a-plane GaN film.r-plane sapphires with good quality were successfully grown by temperature gradient technique(TGT) and edge-defined film-fed crystal growth(EFG) methods.The properties of the sapphires were measured by double crystal diffractometry,optical microscopy and optical spectrometry.The results show that the sapphire grown by the TGT method has a dislocation density of 4×103 cm-2 and transmittance of 83%,and the full ...

关 键 词：温度梯度法 导模法 蓝宝石 位错密度 

分 类 号：O782[理学—晶体学]