Growth of GaN/AlxGa1-xN (x=0.65) Superlattices on Si(111) Substrates Using RF-MBE  

作　　者：Armando S Somintac Tomo Kikuchi Michiya Odawara Takashi Udagawa Motoi Wada Tadashi Ohachi 

机构地区：[1]Department of Electric Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0321, Japan Department of Electric Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0321, Japan Electronic Materials Division, Electronics Section, Showa Denko K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1871, Japan Electronic Materials Division, Electronics Section, Showa Denko K.K., 1505 Shimokagemori, Chichibu, Saitama 369-1871, Japan Department of Electric Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0321, Japan Department of Electric Engineering, Doshisha University, 1-3 Miyakodani, Tatara, Kyotanabe, Kyoto 610-0321, Japan

出　　处：《Journal of Rare Earths》2006年第z1期1-3,共3页稀土学报（英文版）

摘　　要：Superlattices with varying GaN well widths (2, 3, 6, 9 nm) and fixed AlGaN barrier (8 nm) with high Al-content (x=0.65) were grown. Streaky RHEED patterns indicated 2D growth mode for the superlattices. XRD measurements showed multiple satellite peaks corresponding to uniform periodicity of the GaN/AlGaN pairs. The AlGaN barrier XRD peak also shifted with increasing well widths, while the GaN XRD peak was nominally unchanged. Room temperature photoluminescence experiments revealed peak emissions at energies lower than the bulk GaN energy gap. The large red shift with respect to the bulk gap is attributed to significant Stark effect for wide multiple quantum wells.

关 键 词：molecular beam epitaxy SUPERLATTICES GaN AlGaN BUILT-IN electric field STARK effect 

分 类 号：O78[理学—晶体学]