Optical and Micro-Structural Properties of ZnO Thin Films Grown on Silicon Substrate by Pulsed Laser Deposition  

作　　者：He Jianting Zhuang Huizhao Xue Chengshan Tian Deheng Wu Yuxin Xue Shoubin Hu Lijun 

机构地区：[1]Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China

出　　处：《Journal of Rare Earths》2006年第z1期26-28,共3页稀土学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (90301002 and 90201025)

摘　　要：ZnO thin films were deposited on n-Si (111) at various substrate temperatures and oxygen pressures by pulsed laser deposition (PLD) using a Nd∶YAG laser with the wavelength of 1064 nm. X-ray diffraction (XRD), photoluminescence (PL), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to analyze the microstructure, optical property and morphology of the ZnO thin films. A comparatively optimal crystallized ZnO thin film was obtained at the substrate temperature of 600 ℃ in oxygen pressure of 50 mTorr. The intensity of the luminescence strongly depends on the stoichiometry of the film as well as the crystalline quality.

关 键 词：PLD ZnO SUBSTRATE temperature OXYGEN PRESSURE 

分 类 号：TF845-55[冶金工程—有色金属冶金]