2H-SiC Dendritic Nanocrystals In Situ Formation from Amorphous Silicon Carbide under Electron Beam Irradiation  

作　　者：Li Xianxiang Hu Xiaobo Jiang Shouzheng Dong Jie Xu Xiangang Jiang Minhua 李现祥;胡小波;姜守振;董捷;徐现刚;蒋民华(State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China)

机构地区：[1]State Key Laboratory of Crystal Materials,Shandong University,Jinan 250100,China

出　　处：《Journal of Rare Earths》2006年第z1期54-55,共2页稀土学报(英文版)

基　　金：Project supproted by the National Natural Science Foundation of China(60025409 and 50472068);National"863"High Technology Plan(2001AA311080);Program for New Century Excellent Talents in Shangdong University

摘　　要：Under electron beam irradiation,the in-situ formation of 2H-SiC dentritic nanocrystals from amorphous silicon carbide at room temperature was observed.The homogenous transition mainly occurs at the thin edge and on the surface of specimen where the energy obtained from electron beam irradiation is high enough to cause the amorphous crystallizing into 2H-SiC.

关 键 词：electron beam irradiation 2H-SiC dendritic nanocrystal amorphous silicon carbide 

分 类 号：O771[理学—晶体学] O782