Growth of High Quality Semi-Insulating InP Single Crystal by Suppression of Compensation Defects  

作　　者：Zhao Youwen Dong Zhiyuan Duan Manlong Sun Wenrong Yang Zixiang 

机构地区：[1]Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China Institute of Semiconductor, Chinese Academy of Sciences, Beijing 100083, China

出　　处：《Journal of Rare Earths》2006年第z1期75-77,共3页稀土学报（英文版）

摘　　要：Deep level defects in as-grown and annealed SI-InP samples were investigated by thermally stimulated current spectroscopy. Correlations between electrical property, compensation ratio, thermal stability and deep defect concentration in SI-InP were revealed. An optimized crystal growth condition for high quality SI-InP was demonstrated based on the experimental results.

关 键 词：INDIUM PHOSPHIDE DEFECT semi-insualting 

分 类 号：TN304.2[电子电信—物理电子学]