Effects of Germanium on Movement of Dislocations in p-Type Czochralski Silicon  

作　　者：Li Dongsheng Zhao Yiying Yang Deren 

机构地区：[1]State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

出　　处：《Journal of Rare Earths》2006年第z1期83-86,共4页稀土学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China (50032010 and 60225010)

摘　　要：By indentation at room temperature followed by annealing at high temperatures, the pinning effect of germanium on dislocations in germanium-doped Czochralski silicon was investigated. Experimental results show that the dislocations in germanium-doped Czochralski silicon move shorter and slower than those in Czochralski silicon undoping with germanium when the concentration of germanium is over 1×1018 cm-3. The retarding velocity of dislocations is contributed to the dislocations pinning effect of the strain field introduced by the high concentration germanium, and the Ge4B cluster and the oxygen precipitation those are preferred to form at higher concentration germanium.

关 键 词：CZOCHRALSKI SILICON germanium-doped DISLOCATION 

分 类 号：O77+2[理学—晶体学]