电弧离子镀制备TiAlN膜工艺研究  

Research of TiAlN Coating Depostied by Arc ion Plating

作　　者：吕树国[1] 李玉海[1] 张罡[1] 姚俊[1] 毕鉴智[1] 金光[1] 

机构地区：[1]沈阳理工大学中俄联合高能束流实验室,辽宁沈阳110168

出　　处：《沈阳理工大学学报》2006年第1期78-82,共5页Journal of Shenyang Ligong University

摘　　要：采用阴极电弧离子镀技术在1Cr18N i9Ti不锈钢基材上制备TiA lN膜层,镀膜装置为俄罗斯科学院UVN 0.5D2 I电弧离子镀膜机,该设备由一个大功率的气体离子源和两个金属蒸发源组成.气体离子源具有气体离子轰击和辅助沉积的特点.研究了电弧电流、负偏压和气体离子源功率等工艺参数对膜层的影响规律.实验结果表明:气体离子源具有明显的细化金属颗粒的作用.提出了制备TiA lN膜层的最佳工艺,得到了厚度为5~10μm、相结构为Ti0.5A l0.5N、显微硬度为1200HV0.01的TiA lN膜层.TiAN coatings are deposited by cathodic arc ion plating method on 1Cr18Ni9Ti stainless steel.The cathodic arc evaporation apparatus UVNO.5D2I is made in Russian Academy of Sciences,it has a high power gas ion source and two metal evaporating sources,with the advantages of N2 and Ar ions beams being additional deposition processing and bomb clearing effect.The deposition parameters such as arc current,bias voltage and gas ion voltage and current are changed to study their effect on the coating properties.The experiment shows that the gas ion source provides obvious pulverization for metal particles.The optimal processing parameters for preparation of TiAiN coating are proposed,and the coating layer with the thickness of 5μm^10μm,phase structure of Ti_(0.5)Ai_(0.5)N and microhardness of 1000~1200HV_(0.01) are obtained.

关 键 词：电弧离子镀 TiAlN膜层 偏压 抗氧化性 气体离子源 

分 类 号：TB43[一般工业技术]