Fabrication and photoluminescence of Er-doped ZnO thin films on SiO_2/Si substrate by pulsed laser deposition  

作　　者：GU Xiuquan ZHU Liping YE Zhizhen HE Haiping ZHAO Binghui 

机构地区：[1]State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China

出　　处：《Rare Metals》2006年第z2期30-35,共6页稀有金属（英文版）

基　　金：This project was financially supported by the National Natural Science Foundation of China(No.50532060).

摘　　要：Er doped ZnO thin films were grown on Si substrates using SiO2 buffer layer by pulsed laser deposition (PLD) method. The obtained films crystallize well and show high c-axis orientation. The Er content was evidently detected by the energy dispersive X-ray spectroscopy (EDS). Upon annealing in O2 ambience at different temperatures, the films show different photoluminescence properties at 1.54 μm. The samples annealed at 700 and 850 ℃ show intense photoluminescence peaks which enhance with the annealing temperature, while no obvious luminescence peaks are observed for the as-grown samples or annealed at 500 ℃. The possible mechanism was discussed.Er doped ZnO thin films were grown on Si substrates using SiO2 buffer layer by pulsed laser deposition (PLD) method. The obtained films crystallize well and show high c-axis orientation. The Er content was evidently detected by the energy dispersive X-ray spectroscopy (EDS). Upon annealing in O2 ambience at different temperatures, the films show different photoluminescence properties at 1.54 μm. The samples annealed at 700 and 850 ℃ show intense photoluminescence peaks which enhance with the annealing temperature, while no obvious luminescence peaks are observed for the as-grown samples or annealed at 500 ℃. The possible mechanism was discussed.

关 键 词：Er3+ ions ZnO near-infrared photoemission optical communication 

分 类 号：TG146.4[一般工业技术—材料科学与工程]