Infrared studies of vacancy-oxygen-related complexes in electron-irradiated Czochralski-silicon  

作　　者：CAI Lili CHEN Hongjian LI Yangxian CHEN Guifeng LI Xinghua HAO Jiangang ZHANG Yu 

机构地区：[1]School of Material Science and Engineering,Hebei University of Technology,Tianjin 300130,China [2]Tianjin Institute of Technical Physics,Tianjin 300130,China

出　　处：《Rare Metals》2006年第z2期55-58,共4页稀有金属(英文版)

基　　金：The work was financially supported by the National Natural Science Foundation of China(No.50472034);Natural Science Foundation of Hebei Province(No.E2005000048);Specialized Research Fundforthe Doctoral Program of Higher Education(No.20050080006).

摘　　要：The oxygen-related defects in CZ silicon during electron irradiation(1.5 MeV)and subsequent annealing in the range of 150-600℃were investigated by means of FTIR.In the electron irradiation CZ-Si,vacancy-oxygen complex is one of the dominant defects and its concentration is proportional to electron dose but not related to oxygen concentration.In this work,it was focused on the identification of the weak band at 860 cm^(-1)which was originated from asymmetrical stretching vibrations of an oxygen atom in the negative VO complex.It exhibits the same thermal stability with neutral VO band at 830 cm^(-1).In addition,the intensity of 889 cm-1 band has never been observed to exceed that of the A-center,implying that only a partial transformation of VO into VO_(2)does occur.

关 键 词：ELECTRON-IRRADIATION VO FTIR irradiation defect 

分 类 号：TG146.4[一般工业技术—材料科学与工程]