高压纳秒级双快源研究  

High Voltage Nanosecond Pulse Edge Pulse Generator Study

作　　者：王欣[1] 唐丹[1] 邓君[1] 陈敏德[1] 郝晓敏[1] 任柯昱[1] 

机构地区：[1]中国工程物理研究院电子工程研究院,绵阳621900

出　　处：《仪器仪表学报》2005年第z1期409-410,共2页Chinese Journal of Scientific Instrument

摘　　要：试验用高压场效应管作为开关器件,做成脉冲幅度大于4kV、前后沿5ns左右的高压快脉冲源。介绍了该脉冲源的电路结构,着重从高压场效应管的开关基理,场效应管栅极的“过”驱动,多管串联等几方面分析了提高脉冲源输出特性的方法和途径。The switches of high voltage MOS-FET is used to construct a fast high voltage pulse generator,whose pulse amplitude is over 4kV,pulse edges are about 5ns.The circuit construction of pulse generator is presented,the methods and approaches to improve the output characteristics of pulse generator of ns level are analyzed through the switch theory of high voltage MOS-FET,the over driving technology of MOS-FET,and the technology of series MOS-FETs.

关 键 词：高压场效应管 "过"驱动 纳秒级前后沿 

分 类 号：TH7-55[机械工程—仪器科学与技术]