用作驻极体话筒储电层的ETFE薄膜的电荷储存  

The Charge Storage of ETFE Film Used as Storage Layer of Electret Microphone

作　　者：沈莉莉[1] 夏钟福[1] 冀忠宝[1] 朱建伟[1] 

机构地区：[1]同济大学波耳固体物理研究所,上海200092

出　　处：《仪器仪表学报》2005年第z1期113-114,共2页Chinese Journal of Scientific Instrument

摘　　要：利用表面电位衰减测量和热刺激放电电流谱(TSD)分析,研究了乙稀/四氟乙烯共聚物ETFE驻极体中的沉积电荷稳定性及其与极化条件的关系。结果显示,ETFE薄膜驻极体具有优良的电荷储存稳定性,而且其沉积电荷稳定性与极化方式有关。组合ETFE突出的力学性能,使其有望作为驻极体声传感器的储电振膜。The charge stability and the relation among it and the poling modes for poly(ethylene/tetrafluoroethylene) (ETFE) electrets have been studied by means of open-circuit thermally stimulated discharge and surface potential decay.It was found that the charge stability of ETFE electret is very good,which is relevant to the poling modes.In combination with its excellent mechanical property,it is possible that ETFE is used as electret diagram of the electret microphone.

关 键 词：ETFE 电荷稳定性 极化方式 驻极体声传感器 

分 类 号：TH7-55[机械工程—仪器科学与技术]