Characterization of Si/SiGe/Si Deposited on SIMOX SOI by Synchrotron Radiation X-Ray Double-crystal Topography  

作　　者：Ma Tongda Tu Hailing Hu Guangyong Wang Jing 

机构地区：[1]GRINM Semiconductor Materials Co. Ltd.,General Research Institute for Nonferrous Metals,Beijing 100088,China GRINM Semiconductor Materials Co. Ltd.,General Research Institute for Nonferrous Metals,Beijing 100088,China GRINM Semiconductor Materials Co. Ltd.,General Research Institute for Nonferrous Metals,Beijing 100088,China GRINM Semiconductor Materials Co. Ltd.,General Research Institute for Nonferrous Metals,Beijing 100088,China

出　　处：《Journal of Rare Earths》2004年第z2期5-7,共3页稀土学报（英文版）

摘　　要：The synchrotron X-ray double-crystal topography was employed to investigate the structure of Si/SiGe/Si deposited on SIMOX SOI. Rocking curves with three diffraction peaks were acquired before and after 180° rotation of samples. Double-crystal topographs taken at the full width at half maximum (FWHM) of the three peaks differ from each other. Many defects appear in the Si layers that are likely related to the tilt between SOI and epitaxial layers.

关 键 词：SYNCHROTRON radiation double-crystal TOPOGRAPHY TILT STRAINED relaxation 

分 类 号：TG175[金属学及工艺—金属表面处理]