Influence of nitrogen implantation into HSS substrate on internal stress and adhesion strength of c-BN films  

作　　者：ZHANG Ping CAI Zhi-hai TAN Jun XIONG Wan-quan 

机构地区：[1]National Key Laboratory for Remanufacturing, Academy of Armored Force Engineering, Beijing 100072, China National Key Laboratory for Remanufacturing, Academy of Armored Force Engineering, Beijing 100072, China National Key Laboratory for Remanufacturing, Academy of Armored Force Engineering, Beijing 100072, China National Key Laboratory for Remanufacturing, Academy of Armored Force Engineering, Beijing 100072, China

出　　处：《中国有色金属学会会刊：英文版》2004年第z1期286-290,共5页Transactions of Nonferrous Metals Society of China

基　　金：Project (59971065) supported by the National Natural Science Foundation of China

摘　　要：Cubic boron nitride(c-BN) films were deposited on HSS substrate implanted with nitrogen ion by RF-magnetron sputtering. The films were analyzed by bending beam method, scratch test, XRD and AFM. The results show that the implantation of N ion can reduce the internal stress and improve the adhesion strength of the films.The critical load comes to 16.92N, compared to 1.75N of c-BN film on the unimplanted HSS. AFM shows that the surface of the c-BN film on the implanted HSS is low in roughness and small in grain size. The phase structure of the nitrogen implanted layer was analyzed by XRD. The influence of nitrogen implanted layer on the internal stress and adhesion strength of c-BN films were also investigated.

关 键 词：CUBIC BORON NITRIDE film HSS ion IMPLANTATION internal stress ADHESION 

分 类 号：TG77.821[金属学及工艺—刀具与模具]