电力半导体器件运行失效的若干基本问题的讨论  

The Discussion about Several Basic Problems on the Operation Failure of Power Semiconductor Devices

作　　者：王正元[1] 

机构地区：[1]IEEE电力电子学会北京分会,北京100011

出　　处：《电力电子》2004年第6期14-21,43,共9页Power Electronics

摘　　要：本文初步讨论了同分析电力半导体运行失效机理有关的九个基本问题。指出在深刻了解所用器件特点的基础上,充分掌握具体的实际运行工况,做好热分析和热计算,选好器件参数和相应冷却系统,保证在运行的任何工况下,器件都不会超出相应的安全工作区,才能真正用好这些器件。This paper made a preliminary discussion for nine basic problems relating to the analyzing of failure mechanism in operating of power semiconductor devices. It pointed out that in order to use these devices well, it was necessary to master fully the concrete practice operating conditions, to make well thermal analysis and thermal design and to select right the device parameters and corresponding cooling system, on the basis of understanding deep the features of used devices. In brief, it has to be guarantee...

关 键 词：电力半导体器件 失效机理 基本问题 讨论 

分 类 号：TN303[电子电信—物理电子学]