硅基碳纳米管厚膜的制备及其场发射研究  

Fabrication of Carbon Nanotubes Thick Film on Si Substrateand Study of Its Field Emission

作　　者：王琪琨[1] 朱长纯[2] 史永胜 

机构地区：[1]西安交通大学电子与信信息工程学院 [2]西安交通大学电子与信信息工程学院 陕西西安 [3]陕西西安

出　　处：《纳米科技》2004年第2期-,共4页

基　　金：西安交大自然科学基金(0900573035)

摘　　要：该文研究了用涂敷法制备碳纳米管(CNT)厚膜的制备和场发射特性,裂解法获得的碳纳米管与玻璃粉等混合、研磨,直接涂敷在Si基底上,二极管结构测量的结果表明,碳纳米管厚膜有较低的开启电场(1.0～1.5v/μm),场强为5V/μm时,电流密度达到了50μA/cm^2。该工艺的烧结过程应控制好,加热时间稍长,会使CNT厚膜的场发射性能很快下降,时间过长会使CNT处在厚膜表面之下,无法有效发射电子。浆料中的玻璃粉比例增大时,碳纳米管阴极的场发射性能会有所降低。The fabrication of carbon nanotubes (CNT) thick film and its field emission property was studied. A mixture paste for coating was prepared by mixing CNTs with glass frit and coated on Si substrate. The measurements carried out using a diode structure reveal that the electron field emission of the CNTs coating can be turned on with a field as low as 1.0-1.25V/μm and a emission current density of 50μA/cm^2 at 5V/μm can be attained. The sintering process has to be controlled effectively. When the sintering tim...

关 键 词：碳纳米管厚膜 涂敷 粘结剂 场发射 

分 类 号：TB381[一般工业技术—材料科学与工程]