657nm外腔半导体激光器的实现  

A Practice of a 657nm External Cavity Diode Laser

作　　者：吕德胜[1] 黄凯凯[1] 王凤芝[1] 杨东海[1] 

机构地区：[1]北京大学信息科学技术学院,量子电子学所北京100871

出　　处：《时间频率学报》2003年第1期1-6,共6页Journal of Time and Frequency

基　　金：国家自然科学基金资助项目(批准号 6 0 1780 16 )

摘　　要：对一种Littman Metcalf外腔结构半导体激光器的实现过程作了报道。利用这种结构的光反馈特性 ,使原来自由运转时波长在 6 6 0nm附近的半导体激光器在常温下能够调节到 6 57nm附近 ,并且把激光线宽从原来的 30MHz压窄到 1 0 0kHz左右 ,连续调节范围大约为 1 0GHz。In this paper,a realization of a 657nm laser system based on the Littman Metcalf configuration with a 660nm commercial laser diode was reported.Operating a laser diode in an external cavity,which providing frequency selective feedback,is a very effective way to tune the laser frequency to a range far from its free running frequency.About 100KHz spectral linewidth,measured with beat note spectrum of two identical laser systems,and 10GHz of continually tuning range were achieved.This system will be applied to the Ca atomic Ramsey spectroscopy experiment.

关 键 词：外腔反馈 半导体激光器 激光线宽 

分 类 号：TN248[电子电信—物理电子学]