Thermal Stabilization of EDFA gain by hybrid concatenation of antimony-doped silica EDF  

作　　者：Young-Eun Im Uh-Chan Ryu P. Babu Won-Taek Han K. Oh David J. DiGiovanni Baishi Wang Anand Hariharan 

机构地区：[1]Department of Information and Communications, K-JIST, Kwangju, 500712 Rep. of Korea [2]OFS Laboratories, 700 Moutain Ave., Murray Hill, NJ 07974 USA [3]OFS Fitel, SPD, 19 Schoolhouse Road, Somerset, NJ 08873 USA

出　　处：《光学学报》2003年第S1期419-420,共2页Acta Optica Sinica

摘　　要：Sb-doped silica EDF showed an opposite temperature dependent gain profile compared to Al-doped silica EDF. Concatenation of those two EDFs showed a gain variation less than ?0.4 dB over 40nm of C-band with the 15dB gain, in the temperature range of- 40 to + 80℃.Sb-doped silica EDF showed an opposite temperature dependent gain profile compared to Al-doped silica EDF. Concatenation of those two EDFs showed a gain variation less than ?0.4 dB over 40nm of C-band with the 15dB gain, in the temperature range of- 40 to + 80℃.

分 类 号：TN929.11[电子电信—通信与信息系统]