OH Diffusion in Silica Glass Preform During Jacketing Process by Oxy-Hydrogen Burner  

作　　者：B.H.Kim S.R.Han U. C.Paek W.-T.Han S. K.Oh 

机构地区：[1]Department of Information and Communications, Kwangju Institute of Science and Technology (K-JIST), I Oryong-dong Buk-gu Gwangju 500-712, South Korea, [2]Engineering and R & D group, Optical Communication Product Division, Information & Communication Business, Samsung Electronics Co., LTD. # 94-1, Imsoo-dong,Gumi,Gyeong-Buk 730-350, South Korea

出　　处：《光学学报》2003年第S1期76-77,共2页Acta Optica Sinica

摘　　要：Radial distribution of OH diffusion in silica glass preform during jacketing process using a oxy-hydrogen burner was investigated by FTIR spectroscopy. The OH peaks at the jacketing boundary and the surface of the preform were found to be due to diffusion of OH incorporated from the burner.Radial distribution of OH diffusion in silica glass preform during jacketing process using a oxy-hydrogen burner was investigated by FTIR spectroscopy. The OH peaks at the jacketing boundary and the surface of the preform were found to be due to diffusion of OH incorporated from the burner.

分 类 号：TN818[电子电信—信息与通信工程]