CMOS射频集成电路中器件模型的研究  

Research of Device Modeling in CMOS Radio-Frequency Integrated Circuits

作　　者：施超[1] 庄奕琪[1] 

机构地区：[1]西安电子科技大学微电子所,陕西西安710071

出　　处：《微电子学》2002年第6期405-408,共4页Microelectronics

摘　　要：　采用硅材料CMOS工艺制造的射频集成电路具有低功耗、低成本和容易集成的优点。文章讨论了CMOS射频集成电路设计和制造中起关键作用的MOSFET高频模型和螺旋电感模型。为了验证模型,介绍了射频集成电路中的核心模块—低噪声放大器(LNA)—的设计实例。测试结果表明,该模型具有高效、实用的特点。Radiofrequency IC's based on Si and fabricated with CMOS process have the advantages of low power dissipation and very large scale integration The modeling of MOSFET's at highfrequency and spiral inductor, which are the key technology in designing CMOS RF IC's has been discussed in this paper A low noise amplifier (LNA), which is the main block in radiofrequency integrated circuit, is presented as an example to verify the validity of the models Results show that the two models are of good efficiency and practicality

关 键 词：CMOS 射频集成电路 高频模型 螺旋电感 低噪声放大器 

分 类 号：TN432[电子电信—微电子学与固体电子学] TN722.3