高介电常数介质对电容层析成像传感器灵敏场影响的研究  

Study on Effects of High Dielectric Substance on ECT Sensitivity Distribution

作　　者：邵晓寅[1] 冀海峰[1] 黄志尧[1] 李海青[1] 

机构地区：[1]浙江大学工业控制技术国家重点实验室

出　　处：《仪器仪表学报》2002年第z1期66-67,共2页Chinese Journal of Scientific Instrument

基　　金：国家自然科学基金 (5 9995 460 -5 );国家 (863计划 )专项经费(2 0 0 1AA4132 10 )资助项目

摘　　要：以有限元仿真实验为基础 ,通过高介电常数介质在 ECT传感器内不同分布时灵敏场的比较研究 ,结果表明 ,传感器内部各处灵敏度变化不仅与管内高介电常数介质的大小和分布有关 ,还与该点在灵敏场中所处的位置有关。总结一般规律为 :高介电常数介质所在的区域以及附近的区域灵敏度变化最大 ;越靠近电极附近的区域灵敏度的变化越大 ;Using finite element method,the sensitivity distributions under different distributions of high dielectric substance were calculated By comparing these sensitivity distributions,found that the distortion of the sensitivity distribution has relations with the size of section of the substance,its position in the ECT sensor and also its position in the sensitivity distribution The distortion is the heaviest where the high dielectric substance is located The distortion is more heavier when the substance near to the ECT electrode The distortion of the sensitivity distribution by high dielectric substance is like a saddle

关 键 词：层析成像 有限元 灵敏场 传感器 

分 类 号：TP2[自动化与计算机技术—检测技术与自动化装置]