反应烧结碳化硅材料的高温氧化  

High temperature oxidation of reaction-bonded silicon carbide

作　　者：吕振林[1] 李世斌[2] 高积强[2] 金志浩[2] 李贺军[1] 

机构地区：[1]西北工业大学材料科学与工程学院,西安710072 [2]西安交通大学材料科学与工程学院,西安710049

出　　处：《中国有色金属学报》2002年第z1期58-63,共6页The Chinese Journal of Nonferrous Metals

基　　金：国家自然科学基金资助项目 ( 5 9772 0 13);陕西省自然科学基金资助项目 ( 2 0 0 1C11)

摘　　要：研究了反应烧结碳化硅材料 (RB SiC) 90 0℃的氧化过程以及制备参数和掺杂元素对氧化过程的影响。结果表明 :在 90 0℃氧化时 ,除石油焦加入量较高的反应烧结碳化硅材料在氧化初期表现为质量损失外 ,其余均表现为质量增加 ,并且质量增加量与氧化时间遵循抛物线规律。掺杂Al和Ni元素可以提高碳化硅材料的高温抗氧化能力。氧化过程对反应烧结碳化硅材料的导电性能影响不大。对碳化硅材料的氧化机制及影响因素进行了分析和讨论。The oxidation behavior of reaction bonded silicon carbide (RB SiC), and the effects of process parameters on the oxidation, were studied. The results show that the mass of RB SiC samples can be increased when they are oxidized at 900?℃, except that the mass of sample with large addition content of petrol coke can be decreased in initial stage of oxidation. The relationship between the mass gain of RB SiC and holding time follows the parabolic rule. The oxidation resistance of RB SiC at 900?℃ can be increased by the addition of Ni and Al elements. But the oxidation of RB SiC does't affect largely on its electric conduction. The oxidation mechanism of RB SiC and the affecting factor on it are analyzed and discussed.

关 键 词：反应烧结碳化硅 高温氧化 掺杂 

分 类 号：TQ174.5[化学工程—陶瓷工业]