用MOVPE方法外延生长Si掺杂的立方相GaN(英文)  

Si-doped Cubic GaN Grown by Metalorganic Vapor Phase Epitaxy

作　　者：WU Jun ZHAO F H Ito Y Yoshida S Onabe Shiraki Y 

机构地区：[1]Graduate School of Frontier Science,Graduate School of Frontier Science,Yokohama R&D Laboratory,Yokohama R&D Laboratory,Graduate School of Frontier Science,Research Center for Advanced Science and Technology The University of Tokyo,731 Hongo,Bunkyoku,Toky

出　　处：《发光学报》2001年第z1期1-4,共4页Chinese Journal of Luminescence

摘　　要：用MOVPE方法采取一种两步生长过程生长了未掺杂和Si掺杂的GaN。在生长了一个 2 0nm厚的缓冲层后 ,外延生长了 1 μm厚的立方GaN外延层。利用二次离子质谱测定了掺杂的程度。Si doped and un do ped cubic GaN were grown by low pressure metalorganic vapor phase epitaxy using a two step growth process. After the deposition of a 20nm thick buffer layer, an about 1μm thick Si doped cubic GaN epitaxial layer was deposited. Doping l evel was determined by secondary ion mass spectroscopy measurements. X ray diff raction and photoluminescence measurements were used to characterize the str uctural and optical quality of the undoped and the Si doped cubic GaN.

关 键 词：Si掺杂GaN MOVPE 光致发光特性 

分 类 号：TN312.8[电子电信—物理电子学]