全差示光度法联测锗富集物中锗硅  

Determination of Germanium and Sili con by Full -Differential Photometr y

作　　者：刘星星 李兵[2] 杜治坤[2] 

机构地区：[1]株洲冶炼厂,湖南株洲412004 [2]湖南有色金属研究院,湖南长沙410015

出　　处：《湖南有色金属》2001年第6期44-45,51,共3页Hunan Nonferrous Metals

摘　　要：试验在同一份处理好的试样中,采用低温蒸干排除锗的干扰,比色测定硅;采用全差示光度法测定锗,该方法适应于锗富集物中硅0.5%～10.0%、锗1.0%～40%含量范围的测定。In the article,a new method of determinating germanium and silicon in th e same germinum enriched sample was introduced.It could be adapted t o determine germanium and silicon in the same sample in which germanium is1.0%～40%and silicon is 0.5%～10.0%.

关 键 词：全差示光度法 锗分析仪 锗富集物 锗 硅 

分 类 号：O657.32[理学—分析化学]