空间防静电薄膜的制备及耐辐照性能研究  

PREPARATION AND IRRADIATION RESISTANT PROPERTIES'RESEARCH OF ANTISTATIC DISCHARGE FILMS

作　　者：赵印中[1] 李林[1] 许旻[1] 何延春[1] 吴春华[1] 王洁冰[1] 

机构地区：[1]兰州物理研究所表面工程技术国家级重点实验室,甘肃兰州730000

出　　处：《真空与低温》2008年第4期215-218,共4页Vacuum and Cryogenics

摘　　要：利用射频磁控溅射工艺制备了ITO防静电薄膜。研究了辐照试验前后ITO样品的光电性能变化,并用XPS和AFM对其组分及表面形貌变化进行了分析。结果表明,辐照后ITO薄膜的光学透过率变化不大;表面电阻有一定增加,但幅度不大,完全可以满足防静电的要求。Indium tin oxide(ITO)films for antistatic discharge were prepared using RF magnetron sputtering.The optical and electrical properties of ITO films were investigated under irradiation.The element composition and surface micrograph of ITO films were characterized by XPS and AFM,and the damaged mechanism was discussed.The results showed that the optical properties of ITO films had no unapparent changes after irradiation.ITO films could meet the requirement of antistatic discharge although the resistances of IT...

关 键 词：ITO薄膜 静电防护 辐照 

分 类 号：TB381[一般工业技术—材料科学与工程]