AlN/w-BN纳米多层膜的制备及其显微结构  

Synthesis and Microstructure of AlN/w-BN Nano-multilayers

作　　者：喻利花[1] 农尚斌[1] 董师润[1] 许俊华[1] 

机构地区：[1]江苏科技大学材料科学与工程学院,江苏镇江212003

出　　处：《机械工程材料》2008年第10期22-26,共5页Materials For Mechanical Engineering

基　　金：国家自然科学基金资助项目(50574044)

摘　　要：用射频磁控溅射法在硅基片上制备了AlN、BN单层膜及AlN/BN纳米多层膜,采用X射线衍射仪、傅立叶变换红外光谱仪、小角度X射线反射仪、高分辨率透射电子显微镜和原子力显微镜等对其进行了表征。结果表明:AlN/BN多层膜具有(103)择优取向,并且当AlN层厚固定时,随着BN层厚的增加,(103)择优取向得到强化;AlN单层膜及AlN/BN纳米多层膜均呈岛状生长,多层膜界面粗糙度及表面粗糙度均随着BN层厚的增加而减小;多层膜中BN的结构与BN的层厚有关,当AlN层厚保持在4.0 nm且BN层厚为0.32~0.55 nm时,可获得晶态w-BN,当BN层厚增至0.74 nm时,BN呈非晶态。Monolithic AlN,BN films and AlN/BN multilayers were prepared by reactive RF magneron sputtering on Si substrate.The films were characterized by X-ray diffraction,fourier transform infrared spectroscopy,high-resolution transmission electron microscopy and atomic force microscopy.The results showed that the AlN/BN multilayers preferred(103) orientation,and it was strengthened with the increase of BN layer thickness.Monolithic AlN and AlN/BN multilayers showed island growth type.The interface roughness and sur...

关 键 词：AlN/w-BN纳米多层膜 射频磁控溅射 显微结构 

分 类 号：TB381[一般工业技术—材料科学与工程]