PTCDA/p-Si异质结势垒区特性理论的研究  

A Theoretical Study on the Characteristics in Heterojunction Barrier Potential Region

作　　者：张旭[1] 

机构地区：[1]甘肃联合大学数学与信息学院,甘肃兰州730000

出　　处：《甘肃科学学报》2008年第4期70-73,共4页Journal of Gansu Sciences

基　　金：国家自然科学基金资助项目(60676033)

摘　　要：有机半导体材料苝四甲酸二酐(PTCDA)是弱p型半导体材料,其载流子浓度为5×1015/cm3,禁带宽度为2.2eV,可与多种材料形成异质结.详细计算了PTCDA/p-Si异质结势垒形成的电势分布,电场分布和电流-电压(伏安)特性,计算结果与实验结果一致.The organic semiconducting material of 3,4,9,10-perylenetetracarboxylic dianhydride(PTCDA)is a subtle p-type material with the hole carrier density of 5×1015/cm3 and the band gap of 2.2eV and it can form heterojunctions with many other materials.The voltage distribution,the electric field distribution and the characteristics of electric current-electric voltage formed by PTCDA/p-Si heterojunction barrier potentials are calculated in detail.They are consistent with the experimental results.

关 键 词：异质结 电势分布 电场分布 伏安特性 

分 类 号：TN304[电子电信—物理电子学]