LASER LIFT-OFF OF GaN THIN FILMS FROM SAPPHIRE SUBSTRATES  

作　　者：J. Xu, R. Zhang, Y.P. Wang, X.Q. Xiu, S.L. Gu, B. Shen, Y. Shi, Z.G. Liu and Y.D. Zheng (Department of Physics and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China) 

出　　处：《Acta Metallurgica Sinica(English Letters)》2001年第6期448-452,共5页金属学报（英文版）

基　　金：supported by Special Funds for Major Stale Basic Research Project G20000683;863 Hi-tech Research Project,Distinguished Young Scientist Grant(60025411);National Nature Science Foundation of China(69976014,69636010,69806006,69987001);benefited from using the laser device of the Pulsed Laser Deposition laboratory in Nanjing University.

摘　　要：Gallium Nitride film was successfully separated from sapphire substrate by laser radiation. The absorption of the 248 nm radiation by the GaN at the interface results in rapid thermal decomposition of interfacial layer, yielding metallic Ga and N2 gas. The substrate can be easily removed by heating above the Ga melting point (29°C). X-ray diffraction, atomic force microscopy and photoluminescence of GaN before and after lift-off process have been performed, which demonstrated that the separation and transfer process do not alter the structural quality of the GaN films. And further discussions on the threshold energy and crack-free strategies of laser lift-off process have also been presented.Gallium Nitride film was successfully separated from sapphire substrate by laser radiation. The absorption of the 248 nm radiation by the GaN at the interface results in rapid thermal decomposition of interfacial layer, yielding metallic Ga and N2 gas. The substrate can be easily removed by heating above the Ga melting point (29°C). X-ray diffraction, atomic force microscopy and photoluminescence of GaN before and after lift-off process have been performed, which demonstrated that the separation and transfer process do not alter the structural quality of the GaN films. And further discussions on the threshold energy and crack-free strategies of laser lift-off process have also been presented.

关 键 词：Gallium compounds Laser beam effects Nitrides SAPPHIRE SEPARATION 

分 类 号：TN304[电子电信—物理电子学]