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出 处:《Acta Metallurgica Sinica(English Letters)》2001年第6期539-543,共5页金属学报(英文版)
基 金:the National Natural Science Foundation of China(NSFC)for financial support(Grant No.10074063);The Chinese Academy of Scicences(No.KJ952-S1-418);supported by 100-Talent Research Program of The Chinese Academy of Sciences.
摘 要:Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p bands for nano film and bulk material have been observed. The variation of electron density of states in valance bands of nano and bulk structures of CeO2 is discussed in terms of Ce 4 d-4 f resonance.Photoemission behaviors of nano-CeO2 films with particle sizes ranging from 8 nm to 50 nm and bulk CeO2 in Ce 4 d-4 f absorption region have been investigated. Resonant enhancements of Ce 4 f valance band and Ce 5 p bands for nano film and bulk material have been observed. The variation of electron density of states in valance bands of nano and bulk structures of CeO2 is discussed in terms of Ce 4 d-4 f resonance.
关 键 词:Nanostructured materials Optical films OXIDES PHOTOEMISSION RESONANCE
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